PJS6816_S1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 4494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.57 грн |
| 13+ | 24.5 грн |
| 100+ | 17 грн |
| 500+ | 12.46 грн |
| 1000+ | 10.13 грн |
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Технічний опис PJS6816_S1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-6.
Інші пропозиції PJS6816_S1_00001
| Фото | Назва | Виробник | Інформація |
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PJS6816_S1_00001 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Pulsed drain current: 20.8A Power dissipation: 1.25W Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PJS6816_S1_00001 | Виробник : Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
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PJS6816_S1_00001 | Виробник : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFET |
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| PJS6816-S1-00001 | Виробник : Panjit | MOSFET |
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PJS6816_S1_00001 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Pulsed drain current: 20.8A Power dissipation: 1.25W Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |