PJE8402_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.78 грн |
| 8000+ | 6.38 грн |
| 12000+ | 5.65 грн |
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Технічний опис PJE8402_R1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V.
Інші пропозиції PJE8402_R1_00001 за ціною від 5.11 грн до 32.81 грн
| Фото | Назва | Виробник | Інформація |
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PJE8402_R1_00001 | Виробник : Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
на замовлення 15131 шт: термін постачання 21-31 дні (днів) |
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PJE8402_R1_00001 | Виробник : Panjit |
MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 1698 шт: термін постачання 21-30 дні (днів) |
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PJE8402_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2.8A Mounting: SMD Case: SOT523 кількість в упаковці: 1 шт |
товар відсутній |
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PJE8402_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2.8A Mounting: SMD Case: SOT523 |
товар відсутній |