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PE29100A-X

PE29100A-X pSemi


pe29100ds.pdf Виробник: pSemi
Description: IC GATE DRVR HALF-BRIDGE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 5.5V
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: Die
Rise / Fall Time (Typ): 2.5ns, 2.5ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A, 4A
DigiKey Programmable: Not Verified
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Технічний опис PE29100A-X pSemi

Description: IC GATE DRVR HALF-BRIDGE DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4V ~ 5.5V, High Side Voltage - Max (Bootstrap): 100 V, Supplier Device Package: Die, Rise / Fall Time (Typ): 2.5ns, 2.5ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 2A, 4A, DigiKey Programmable: Not Verified.