PCDP20120G1_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 586.71 грн |
50+ | 473.56 грн |
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Технічний опис PCDP20120G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 20A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1040pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Інші пропозиції PCDP20120G1_T0_00001 за ціною від 540.18 грн до 628.58 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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PCDP20120G1_T0_00001 | Виробник : Panjit | SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
на замовлення 1820 шт: термін постачання 21-30 дні (днів) |
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PCDP20120G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ufmax: 2V Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA кількість в упаковці: 1 шт |
товар відсутній |
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PCDP20120G1-T0-00001 | Виробник : Panjit | Schottky Diodes & Rectifiers TO-220AC/SIC/TO/SIC-200WH |
товар відсутній |
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PCDP20120G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ufmax: 2V Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA |
товар відсутній |