PBSS5220PAPS115 NXP USA Inc.
Виробник: NXP USA Inc.Description: NOW NEXPERIA PBSS5220PAPS SMALL
Packaging: Bulk
Part Status: Active
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 95MHz
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1734+ | 12.19 грн |
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Технічний опис PBSS5220PAPS115 NXP USA Inc.
Description: NOW NEXPERIA PBSS5220PAPS SMALL, Packaging: Bulk, Part Status: Active, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V, Frequency - Transition: 95MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.