NX3020NAKT,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 180MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 230mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 180MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 230mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
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Технічний опис NX3020NAKT,115 NXP USA Inc.
Description: MOSFET N-CH 30V 180MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, Power Dissipation (Max): 230mW (Ta), 1.06W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-75, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V.
Інші пропозиції NX3020NAKT,115
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NX3020NAKT,115 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 30V 180MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 230mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-75 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
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