NTE2997 NTE Electronics
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -160V
Drain current: -7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -160V
Drain current: -7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис NTE2997 NTE Electronics
Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -160V, Drain current: -7A, Power dissipation: 100W, Case: TO3PN, Gate-source voltage: ±15V, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції NTE2997
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NTE2997 | Виробник : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -160V Drain current: -7A Power dissipation: 100W Case: TO3PN Gate-source voltage: ±15V Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |