NTE2970 NTE Electronics
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.4A
Pulsed drain current: 88A
Power dissipation: 278W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.4A
Pulsed drain current: 88A
Power dissipation: 278W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1134.27 грн |
2+ | 753.78 грн |
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Технічний опис NTE2970 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 13.4A; Idm: 88A; 278W; TO3P, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 13.4A, Pulsed drain current: 88A, Power dissipation: 278W, Case: TO3P, Gate-source voltage: ±30V, On-state resistance: 0.25Ω, Mounting: THT, Kind of channel: enhanced.