NSVBC143ZDXV6T1G onsemi
Виробник: onsemiDescription: TRANS BRT 2NPN BIPO SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.79 грн |
| 15+ | 21.28 грн |
| 100+ | 12.77 грн |
| 500+ | 11.09 грн |
| 1000+ | 7.54 грн |
| 2000+ | 6.94 грн |
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Технічний опис NSVBC143ZDXV6T1G onsemi
Description: TRANS BRT 2NPN BIPO SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NSVBC143ZDXV6T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NSVBC143ZDXV6T1G | Виробник : ON Semiconductor |
Dual NPN Bias Resistor Transistors Automotive AEC-Q101 |
товар відсутній |
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NSVBC143ZDXV6T1G | Виробник : onsemi |
Description: TRANS BRT 2NPN BIPO SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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NSVBC143ZDXV6T1G | Виробник : onsemi |
Bipolar Transistors - BJT SOT-563 DUAL 4.7/47 K OH |
товар відсутній |