NRVTSA4100T3G-GA01 onsemi
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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Технічний опис NRVTSA4100T3G-GA01 onsemi
Description: DIODE SCHOTTKY 100V 4A SMA, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: SMA, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A, Current - Reverse Leakage @ Vr: 25 µA @ 100 V.