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NESG2030M04-A

NESG2030M04-A CEL

NESG2030M04.pdf Виробник: CEL
Description: RF TRANS NPN 2.3V 60GHZ M04
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 80mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Supplier Device Package: M04
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Технічний опис NESG2030M04-A CEL

Description: RF TRANS NPN 2.3V 60GHZ M04, Packaging: Bulk, Package / Case: SOT-343F, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 16dB, Power - Max: 80mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 2.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V, Frequency - Transition: 60GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz, Supplier Device Package: M04.