MWI100-12A8T IXYS
Виробник: IXYS
Description: IGBT MODULE 1200V 160A 640W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 6.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MODULE 1200V 160A 640W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 6.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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Технічний опис MWI100-12A8T IXYS
Description: IGBT MODULE 1200V 160A 640W E3, Packaging: Tube, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: E3, IGBT Type: NPT, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 640 W, Current - Collector Cutoff (Max): 6.3 mA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.