MURTA300120R GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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Технічний опис MURTA300120R GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Інші пропозиції MURTA300120R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MURTA300120R | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery |
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