Технічний опис MURT20060 GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 160 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MURT20060
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MURT20060 | Виробник : GeneSiC Semiconductor |
Description: DIODE MODULE 600V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товар відсутній |
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MURT20060 | Виробник : GeneSiC Semiconductor | Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V200A600P/424R |
товар відсутній |