Технічний опис MT46V16M16CY-5B AAT:M TR Micron
Description: IC DRAM 256MBIT PARALLEL 60FBGA, Packaging: Tape & Reel (TR), Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.5V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-FBGA (8x12.5), Grade: Automotive, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції MT46V16M16CY-5B AAT:M TR
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MT46V16M16CY-5B AAT:M TR | Виробник : Micron Technology Inc. |
 Description: IC DRAM 256MBIT PARALLEL 60FBGAPackaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (8x12.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT46V16M16CY-5B AAT:M TR | Виробник : Micron Technology Inc. |
Description: IC DRAM 256MBIT PARALLEL 60FBGA Packaging: Cut Tape (CT) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (8x12.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 16M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товар відсутній |