MT29E512G08CMCBBH7-6:B TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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Технічний опис MT29E512G08CMCBBH7-6:B TR Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL 167MHZ, Packaging: Tape & Reel (TR), Memory Size: 512Gbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND, Clock Frequency: 167 MHz, Memory Format: FLASH, Memory Interface: Parallel, Memory Organization: 64G x 8, DigiKey Programmable: Not Verified.