MSCSM120HRM163AG Microchip Technology
Виробник: Microchip TechnologyDescription: SIC 4N-CH 1200V/700V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc), 365W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20627.32 грн |
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Технічний опис MSCSM120HRM163AG Microchip Technology
Description: SIC 4N-CH 1200V/700V 173A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 745W (Tc), 365W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V, Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA.