MSCSM120HRM08NG Microchip Technology
Виробник: Microchip TechnologyDescription: SIC 4N-CH 1200V/700V 317A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.253kW (Tc), 613W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA
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Технічний опис MSCSM120HRM08NG Microchip Technology
Description: SIC 4N-CH 1200V/700V 317A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.253kW (Tc), 613W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V, Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA.