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MCG05N20-TP Micro Commercial Co
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Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 4.5A, 10V
Power Dissipation (Max): 54W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 100 V
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Технічний опис MCG05N20-TP Micro Commercial Co
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 4.5A, 10V, Power Dissipation (Max): 54W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN3333, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 100 V.