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LVE2560-M3R/P Vishay General Semiconductor - Diodes Division
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Description: DIODE BRIDGE
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис LVE2560-M3R/P Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE, Packaging: Tape & Reel (TR), Package / Case: 4-SIP, GSIB-5S, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GSIB-5S, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 25 A, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.