Технічний опис JANTXV2N3439UA MICROSEMI
Description: TRANS NPN 350V 1A UA, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: UA, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/368.
Інші пропозиції JANTXV2N3439UA
Фото | Назва | Виробник | Інформація |
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JANTXV2N3439UA | Виробник : Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
товар відсутній |
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JANTXV2N3439UA | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT 350V 1A 800MW Power BJT |
товар відсутній |