JANTX1N6638/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GP REV 150V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
Qualification: MIL-PRF-19500/578
Description: DIODE GP REV 150V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
Qualification: MIL-PRF-19500/578
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Технічний опис JANTX1N6638/TR Microchip Technology
Description: DIODE GP REV 150V 300MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4.5 ns, Technology: Standard, Reverse Polarity, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 200°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Current - Reverse Leakage @ Vr: 500 nA @ 125 V, Qualification: MIL-PRF-19500/578.