Технічний опис JAN2N4033 MOTOROLA
Description: TRANS PNP 80V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/512.
Інші пропозиції JAN2N4033
Фото | Назва | Виробник | Інформація |
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JAN2N4033 | Виробник : Microchip Technology |
Description: TRANS PNP 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Qualification: MIL-PRF-19500/512 |
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JAN2N4033 | Виробник : Microchip / Microsemi | Bipolar Transistors - BJT 80 V Small-Signal BJT |
товар відсутній |