IXTL2X220N075T IXYS
Виробник: IXYS
Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
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Технічний опис IXTL2X220N075T IXYS
Description: MOSFET 2N-CH 75V 120A I5-PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150W, Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 120A, Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ISOPLUSi5-Pak™.