IXGP4N100 IXYS
Виробник: IXYS
Description: IGBT 1000V 8A 40W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/390ns
Switching Energy: 900µJ (off)
Test Condition: 800V, 4A, 120Ohm, 15V
Gate Charge: 13.6 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 40 W
Description: IGBT 1000V 8A 40W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/390ns
Switching Energy: 900µJ (off)
Test Condition: 800V, 4A, 120Ohm, 15V
Gate Charge: 13.6 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 40 W
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Технічний опис IXGP4N100 IXYS
Description: IGBT 1000V 8A 40W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 20ns/390ns, Switching Energy: 900µJ (off), Test Condition: 800V, 4A, 120Ohm, 15V, Gate Charge: 13.6 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 40 W.