IXFN55N120SK IXYS
Виробник: IXYSDescription: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4655.87 грн |
| 10+ | 4062.9 грн |
| 100+ | 3642.63 грн |
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Технічний опис IXFN55N120SK IXYS
Description: SIC AND MULTICHIP DISCRETE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V, Vgs(th) (Max) @ Id: 3.6V @ 12mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V.