Технічний опис IS61NVP51236-200B3LI ISSI
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.375V ~ 2.625V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Part Status: Obsolete, Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 512K x 36, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NVP51236-200B3LI
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS61NVP51236-200B3LI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 18MBIT PARALLEL 165TFBGA Packaging: Tray Package / Case: 165-TBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-TFBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товар відсутній |
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IS61NVP51236-200B3LI | Виробник : ISSI | SRAM 18Mb,"No-Wait"/Pipeline,Sync,512K x 36,200Mhz,2.5v - I/O,165 Ball BGA, RoHS |
товар відсутній |