IS35ML04G088-BLA2 ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
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Технічний опис IS35ML04G088-BLA2 ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,, Packaging: Tray, Package / Case: 63-VFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND (SLC), Memory Format: FLASH, Supplier Device Package: 63-VFBGA (9x11), Grade: Automotive, Write Cycle Time - Word, Page: 25ns, 700µs, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8, Qualification: AEC-Q100.