IRS21858STRPBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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Технічний опис IRS21858STRPBF Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC, Packaging: Tape & Reel (TR), Package / Case: 16-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 16-SOIC, Rise / Fall Time (Typ): 60ns, 20ns, Channel Type: Independent, Driven Configuration: High-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 3.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, DigiKey Programmable: Not Verified.