IRLR8259PBF

IRLR8259PBF ROCHESTER ELECTRONICS


IRSDS09964-1.pdf?t.download=true&u=5oefqw Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IRLR8259PBF - IRLR8259 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 75 шт:

термін постачання 21-31 дні (днів)
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Технічний опис IRLR8259PBF ROCHESTER ELECTRONICS

Description: MOSFET N-CH 25V 57A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V.

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IRLR8259PBF IRLR8259PBF Виробник : Infineon Technologies irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9 Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
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