IRLBL1304

IRLBL1304 Infineon Technologies


irlbl1304.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
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Технічний опис IRLBL1304 Infineon Technologies

Description: MOSFET N-CH 40V 185A SUPER D2PAK, Packaging: Tube, Package / Case: Super D2-Pak, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 185A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 110A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Super D2-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V.