IRGS4055PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 300V 110A 255W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 44ns/245ns
Test Condition: 180V, 35A, 10Ohm
Gate Charge: 132 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 255 W
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Технічний опис IRGS4055PBF Infineon Technologies
Description: IGBT 300V 110A 255W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: D2PAK, IGBT Type: Trench, Td (on/off) @ 25°C: 44ns/245ns, Test Condition: 180V, 35A, 10Ohm, Gate Charge: 132 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 255 W.