IRGB30B60K

IRGB30B60K Infineon Technologies


irgs30b60kpbf.pdf?fileId=5546d462533600a40153565aa8cd24ba Виробник: Infineon Technologies
Description: IGBT 600V 78A 370W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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Технічний опис IRGB30B60K Infineon Technologies

Description: IGBT 600V 78A 370W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 46ns/185ns, Switching Energy: 350µJ (on), 825µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 102 nC, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 370 W.