IRFR18N15DPBF-INF Infineon Technologies

Description: HEXFET SMPS POWER MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.