IRFH5053TR2PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 100V 9.3A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
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Технічний опис IRFH5053TR2PBF Infineon Technologies
Description: MOSFET N-CH 100V 9.3A PQFN56, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V.