IRFBA1405P

IRFBA1405P Infineon Technologies


irfba1405ppbf.pdf?fileId=5546d462533600a40153561a142a1e72 Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 174A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
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Технічний опис IRFBA1405P Infineon Technologies

Description: MOSFET N-CH 55V 174A SUPER-220, Packaging: Tube, Package / Case: TO-273AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 174A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 101A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SUPER-220™ (TO-273AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V.