IRFAF20 International Rectifier
Виробник: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A
Power Dissipation (Max): 50W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Description: N-CHANNEL HERMETIC MOS HEXFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A
Power Dissipation (Max): 50W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
85+ | 252.72 грн |
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Технічний опис IRFAF20 International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A, Power Dissipation (Max): 50W, Supplier Device Package: TO-204AA (TO-3), Part Status: Active, Drain to Source Voltage (Vdss): 900 V.