IRF7410TRPBF-1

IRF7410TRPBF-1 Infineon Technologies


IRF7410TRPbF_10-16-14.pdf Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
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Технічний опис IRF7410TRPBF-1 Infineon Technologies

Description: MOSFET P-CH 12V 16A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V.