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IRF7325TR Infineon Technologies
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Description: MOSFET 2P-CH 12V 7.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
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Технічний опис IRF7325TR Infineon Technologies
Description: MOSFET 2P-CH 12V 7.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 7.8A, Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO.