IRF7204TR

IRF7204TR Infineon Technologies


IRF7204.pdf Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
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Технічний опис IRF7204TR Infineon Technologies

Description: MOSFET P-CH 20V 5.3A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V.