IRF6811STRPBF-INF Infineon Technologies

Description: DIRECTFET PLUS POWER MOSFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V, Power Dissipation (Max): 2.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: DirectFET™ Isometric SQ, Part Status: Active, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V.