IRF6794MTR1PBF Infineon Technologies

Description: MOSFET N-CH 25V 32A DIRECTFET, Packaging: Cut Tape (CT), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 2.8W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 13 V.