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IRF6716MTR1PBF Infineon Technologies
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Description: MOSFET N-CH 25V 39A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
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Технічний опис IRF6716MTR1PBF Infineon Technologies
Description: MOSFET N-CH 25V 39A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 3.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V.