IRF6641TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 4.6A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 200V 4.6A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
150+ | 142.59 грн |
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Технічний опис IRF6641TRPBF Infineon Technologies
Description: MOSFET N-CH 200V 4.6A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MZ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 150µA, Supplier Device Package: DIRECTFET™ MZ, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V.
Інші пропозиції IRF6641TRPBF за ціною від 171.88 грн до 341.56 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IRF6641TRPBF | Виробник : Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC |
на замовлення 2672 шт: термін постачання 21-30 дні (днів) |
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IRF6641TRPBF | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF6641TRPBF - IRF6641 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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IRF6641TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.6A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4800 шт |
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IRF6641TRPBF | Виробник : Infineon Technologies | Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R |
товар відсутній |
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IRF6641TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 200V 4.6A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MZ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
товар відсутній |
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IRF6641TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.6A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |