![IR25606SPBF-INF IR25606SPBF-INF](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4014/MFG_EL5102ISZ.jpg)
IR25606SPBF-INF Infineon Technologies
![IRSDS19323-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IR25606SPBF-INF Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 150ns, 50ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.9V, Current - Peak Output (Source, Sink): 200mA, 350mA, Part Status: Active, DigiKey Programmable: Not Verified.