IPP90N06S4L04AKSA2

IPP90N06S4L04AKSA2 Infineon Technologies


Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис IPP90N06S4L04AKSA2 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO220-3, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 90µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.