IPD950P06NMSAUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
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Технічний опис IPD950P06NMSAUMA1 Infineon Technologies
Description: MOSFET P-CH 60V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drain to Source Voltage (Vdss): 60 V.