IPB60R280P6ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.43 грн |
| 10+ | 141.92 грн |
| 100+ | 98.68 грн |
| 500+ | 75.22 грн |
Відгуки про товар
Написати відгук
Технічний опис IPB60R280P6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 430µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.
Інші пропозиції IPB60R280P6ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPB60R280P6ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 13.8A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|
|
|
IPB60R280P6ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 13.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 430µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
товар відсутній |
|
 |
IPB60R280P6ATMA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_PRICE/PERFORM |
товар відсутній |