IPA65R125C7

IPA65R125C7 Infineon Technologies


INFNS30020-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IPA65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 412 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
111+206.78 грн
Мінімальне замовлення: 111
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Технічний опис IPA65R125C7 Infineon Technologies

Description: IPA65R125 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 440µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V.