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IKW03N120H Infineon Technologies
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Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
226+ | 92.19 грн |
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Технічний опис IKW03N120H Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO247-3-21, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 140µJ (on), 150µJ (off), Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.